Chapter of Books
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift
E. Degoli, G. Cantele, E. Luppi, R. Magri, S. Ossicini, D. Ninno, O. Bisi, G. Onida, M. Gatti, A. Incze, O. Pulci, R. Del Sole, AIP Conf. Proc. 772 (2005) p.p.859-860
Ab-initio excited states calculations of semiconductor materials: from bulk to low dimensional systems
Band-offset driven efficiency of the doping of SiGe core-shell nanowires
R. Rurali, M. Amato, S.
Ossicini
, 2012 12th IEEE International Conference on Nanotechnology (IEEE-Nano) 978-1-4673-2200-3/12
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals
R. Magri, F. Iori, E. Degoli, O. Pulci, Stefano Ossicini, AIP Conf. Proc. 963, 359-363 (2007)
Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures
Electronic and Optical Properties of Silicon Nanocrystals
First principles optical properties of low dimensional silicon structures
Gain theory and models in silicon nanostructures
Interface effects on the in-plane anisoptropy of (InGaAs)/InP and (InAlAs)/InP superlattices
R. Magri, C. Ghidoni, S. Ossicini, in Physics of Semiconductors 2002 ed. By A. R. Long and J. H. Davies, Institute of Physics Conference Series Number 171 (Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA) 2003) pp. D103-106
Oxidized silicon nanoclusters: a theoretical study
P and B single- and co-doped Silicon Nanocrystals: Formation and Activation Energies, Electronic and Optical Properties
Selective doping of SiGe core-shell nanowires: A possibile route to photovoltaics
S. Ossicini, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY Volume: 242 Meeting Abstract: 134-COMP
Silicon-Based Light Sources
A. Anopchenko, A. Prokofiev, I. N. Yassievich, S. Ossicini, L. Tsybeskov, D. J. Lockwood, S. Saeed, T. Gregorkiewicz, M. Wojdak, J. Liu, and A. Meldrum, in Handbook of Silicon Photonics (Series in Optics and Optoelectronics), ed. by L. Vivien and L. Pavesi, pp. 329-431 (Taylor and Francis) 2013.
The optoelectronic properties of silicon nanostructures: the role of interfaces
S. Ossicini, in Semiconductor Conference CAS 2001 Proceedings ed. by D. Dascalu , IEEE New York vol. 1 (2001) p.p. 23-26
The structural, electronic and optical properties of Si nanoclusters: effects of size, doping and surface passivation
Theoretical Studies of Absorption, Emission and Gain in Silicon Nanostructures - SILICON NANOPHOTONICS. Basic Principles, Present Status and Perspectives
Will silicon be the photonics material of the third millennium?
L. Pavesi, L. Dal Negro, N. Daldosso, Z. Gaburro, M. Cazzanelli, F. Iacona, G. Franzò, D. Pacifici, F, Priolo, Stefano Ossicini, M. Luppi, E. Degoli, R, Magri
in Physics of Semiconductors 2002 ed. By A. R. Long and J. H. Davies, Institute of Physics Conference Series Number 171 (Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA) 2003) p.p. 261-268